Snubber o ansawdd uchel gyda gallu llwyth pwls uchel

Disgrifiad Byr:

snubber IGBT SMJ-P

Mae cynwysyddion ffilm snubber CRE wedi'u cynllunio ar gyfer y gweithrediad cerrynt brig uchel sydd ei angen i amddiffyn rhag folteddau dros dro.

1. uchel dv/dt wrthsefyll gallu

2. gosod hawdd ar gyfer IGBT

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Data technegol

Amrediad tymheredd gweithredu	Tymheredd gweithredu uchaf., Uchaf, uchafswm: +105 ℃ Tymheredd y categori uchaf: +85 ℃ Tymheredd categori is: -40 ℃
ystod capacitance	0.1μF～5.6μF
Foltedd graddedig	700V.DC～3000V.DC
Cap.tol	±5%(J); ±10%(K)
Gwrthsefyll foltedd	1.5Un DC/10S
Ffactor afradu	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Gwrthiant inswleiddio	C≤0.33μF RS≥15000 MΩ (ar 20 ℃ 100V.DC 60S) C＞0.33μF RS* C≥5000S (ar 20 ℃ 100V.DC 60S)
Gwrthsefyll cerrynt streic	gweler y daflen ddata
arafu fflamau	UL94V-0
Disgwyliad oes	100000h(Dad; Θ man poeth ≤85 ° C)
Safon gyfeirio	IEC61071;GB/T17702;

Tabl manyleb

foltedd	Un 700V.DC,Urms400Vac;Us1050V
	Dimensiwn (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @ 40 ℃ @ 100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140. llarieidd-dra eg	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225. llarieidd-dra eg	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316. llarieidd-dra eg	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380. llarieidd-dra eg	28
6.8	57.5	42.5	56	3.2	32	220	1496. llarieidd-dra eg	32
8	57.5	42.5	56	2.8	30	200	1600	33
foltedd	Un 1000V.DC,Urms500Vac;Us1500V
	Dimensiwn (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815. llarieidd-dra eg	25
3.5	57.5	38	54	3.5	28	500	1750. llathredd eg	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
foltedd	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750. llathredd eg	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815. llarieidd-dra eg	28
3.5	57.5	38	54	3.5	25	500	1750. llathredd eg	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
foltedd	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750. llathredd eg	30
4	57.5	42.5	56	3.2	25	450	1800	32
foltedd	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816. llarieidd	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
foltedd	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28