Cynhwyswyr Snubber Polypropylen a ddefnyddir mewn cymwysiadau foltedd uchel, cerrynt uchel a pwls uchel

Disgrifiad Byr:

Cynhwysydd Echelinol Snubber SMJ-TE

Mae Cynwysorau Snubber yn gynwysorau cyfredol uchel, amledd uchel gyda therfynellau echelinol.Mae Cynhwyswyr Ffilm Echelinol ar gael yn CRE.Rydym yn cynnig rhestr eiddo, prisiau, a thaflenni data ar gyfer Axial Film Capacitors.

1. ISO9001 ac UL ardystiedig;

2. Rhestr helaeth;

Anfonwch e-bost atom Lawrlwythwch fel PDF

Manylion Cynnyrch

Tagiau Cynnyrch

Data technegol

Amrediad tymheredd gweithredu	Tymheredd gweithredu uchaf., Uchaf, uchafswm: + 85 ℃ tymheredd categori uchaf: +85 ℃ tymheredd categori is: -40 ℃
ystod capacitance	0.1μF～5.6μF
Foltedd graddedig	630V.DC ～ 2000V.DC
Cap.tol	±5%(J); ±10%(K)
Gwrthsefyll foltedd	1.5Un DC/10S
Ffactor afradu	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Gwrthiant inswleiddio	C≤0.33μF RS≥15000 MΩ (ar 20 ℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ar 20 ℃ 100V.DC 60S)
Gwrthsefyll cerrynt streic
Disgwyliad oes	100000h(Dad; Θ man poeth ≤85 ° C)
Safon gyfeirio	IEC 61071; IEC 61881; GB/T17702

Cais

1. IGBT Snubber, GTO snubber

2. Swyddogaeth sylfaenol snubber yw amsugno egni o'r adweithyddion yn y gylched pŵer.

3. Mae'n cael ei ddefnyddio'n eang mewn offer electronig pŵer pan fydd y foltedd brig, brig amddiffyn amsugno presennol.

Amlinelliad o luniad

Cynhwysydd Echelinol SMJ-TE
foltedd		Un630V.DC;Urms400Vac;Ni 945V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0.22	32	9.5	17.5	0.8	16	23	300	66	5.3
0.33	32	12	20	1	13	22	200	66	6.5
0.47	32	14.5	22.5	1	11	21	220	103.4	8.3
0.68	32	18	26	1	10	20	180	122.4	9.5
1	37	11	19	1	8	28	150	150	7.6
1.5	37	13.5	21.5	1	7	27	150	225	9.5
2	37	16	24	1.2	6	24	130	260	10.2
2.5	37	18	26	1.2	5.5	25	120	300	10.5
3	37	20	28	1.2	5	30	110	330	10.8
3.3	37	21	29	1.2	4.5	30	110	363	11.2
4	57	27	36.5	1.2	4.2	32	220	880	12.8
4.7	57	28	40.5	1.2	3.8	32	200	940	13.8
5.6	57	31	33.5	1.2	3.5	32	185	1036. llarieidd-dra eg	13.5
6.8	37	29	41.5	1.2	2.5	28	100	680	13.8
6.8	57	34	46.5	1.2	2.8	30	180	1224. llarieidd-dra eg	14.2
foltedd		Un 1000V.DC;Urms 500Vac;Ni 1500V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0.15	32	10	17.5	0.8	20	20	1100	165	5.5
0.22	32	12	20	1	15	21	1000	220	7.3
0.33	32	15.5	23	1	13	21	1000	330	8.7
0.47	32	18.5	26	1.2	10	23	1000	470	10.5
0.47	44	14	22	1.2	9	24	900	423	9.5
0.68	32	20	32.5	1.2	7	25	900	612	10.8
0.68	44	17	25	1.2	6	26	800	544	10.2
1	44	21.5	29.5	1.2	5.6	27	900	900	11
1.5	44	26	35.5	1.2	5	29	900	1350. llathredd eg	12
1.5	57	21	29	1.2	5	30	700	1050	12.2
2	44	28	40.5	1.2	4.8	30	800	1600	13.2
2	57	24	33.5	1.2	4.8	32	600	1200	12.8
2.2	44	30	42.5	1.2	4.2	32	600	1320	13.8
2.2	57	25	34.5	1.2	4.2	32	500	1100	13.5
2.5	57	25	38	1.2	4	33	500	1250	14.2
3	57	28	40.5	1.2	3.5	34	480	1440. llechwraidd a	15.6
3.3	57	29.5	42	1.2	3.2	35	450	1485. llarieidd-dra eg	16.5
3.5	57	30.5	43	1.2	3.2	35	450	1575. llarieidd-dra eg	17.2
4.7	57	35	50.5	1.2	3	36	420	1974	17.8
5.6	57	38.5	65	1.2	2.8	38	400	2240	18.2
foltedd		Un 1200V.DC;Urms 550Vac;Ni 1800V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0.1	32	8.5	16	0.8	20	20	1300	130	6
0.15	32	10	17.5	1	18	20	1200	180	7.5
0.22	32	13	21	1	15	22	1200	264	8.3
0.33	32	16	24	1	12	23	1200	396	9
0.47	32	17.5	30	1.2	10	23	1200	564	9.5
0.47	44	15	23	1.2	9	26	1100	517	9.8
0.68	32	21.5	34	1.2	8	25	1100	517	10
0.68	44	18.5	26.5	1.2	6	27	1000	680	11.7
1	44	23	31	1.2	5	28	1000	1000	12.4
1.5	44	26.5	39	1.2	5	30	950	1425. llathredd eg	13.5
1.5	57	22.5	30.5	1.2	5	29	900	1350. llathredd eg	12.6
2	44	29	45	1.2	5	30	800	1600	14.2
2	57	26.5	34.5	1.2	4.8	30	750	1500	13.8
2.2	44	31	47	1.2	4.2	32	800	1760. llarieidd-dra eg	14.5
2.2	57	27.5	35.5	1.2	4.2	35	700	1540	14.5
3	57	29	44.5	1.2	3.2	37	500	1500	17.2
3.3	57	30.5	46	1.2	3.2	38	450	1485. llarieidd-dra eg	17.8
4.7	57	38	53.5	1.2	3	38	420	1974	18.2
foltedd		Un 1700V.DC;Urms 600Vac;Ni 2550V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0.1	32	9.5	17.5	0.8	18	25	1300	130	7.5
0.15	32	12	20	1	16	24	1200	180	8.5
0.22	32	15	23	1	15	24	1200	264	9.3
0.33	32	18.5	26.5	1	12	22	1200	396	9.9
0.33	44	13.5	21.5	1.2	12	29	1100	363	10.2
0.47	44	16	24	1.2	9	28	1000	470	11.2
0.68	44	20	28	1.2	8	27	1000	680	11.7
1	44	24	33.5	1.2	5.6	26	900	900	12.4
1	57	19.5	27.5	1.2	6	33	850	850	10.8
1.5	44	28	40.5	1.2	4.8	25	800	1200	13.5
1.5	57	24	32	1.2	5	33	750	1125. llarieidd-dra eg	13.5
2	44	31.5	47	1.2	4.5	24	750	1500	14.2
2	57	27.5	37	1.2	4.8	32	650	1300	12.8
2.2	44	33.5	49	1.2	4.5	34	700	1540	15.6
2.2	57	29	40	1.2	4.2	32	600	1320	14.5
3	57	31	46.5	1.2	4	30	560	1680. llarieidd-dra eg	17.2
3.3	57	33	48.5	1.2	3.2	29	500	1650. llathredd eg	17.6
4	57	37	52.5	1.2	3	28	450	1800	18.2
foltedd		Un 2000V.DC;Urms 700Vac;Ni 3000V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0.068	32	9	17	0.8	25	23	1500	102	6.9
0.1	32	11.5	19.5	1	18	22	1500	150	8.2
0.1	37	10.5	18.5	1	18	26	1450	145	8
0.22	32	17.5	25.5	1.2	15	21	1400	308	9.1
0.22	37	16	24	1.2	15	25	1300	286	9
0.33	37	20	28	1.2	12	24	1250	412.5	9.5
0.33	44	18	26	1.2	12	30	1200	396	10.2
0.47	44	19.5	32	1.2	10	29	1100	517	12.4
0.68	44	24	36.5	1.2	8	28	1000	680	14.2
0.68	57	18.5	31	1.2	8	27	900	612	14.2
1	57	23.5	36	1.2	6	31	950	950	14.5
1.5	57	29.5	42	1.2	5	31	850	1275. llarieidd-dra eg	14.5
2	57	33	48.5	1.2	4.2	31	750	1500	16.5
2.2	57	35	50.5	1.2	4	30	700	1540	17.8
foltedd		Un 3000V.DC;Urms 750Vac;Ni 4500V
Cynhwysedd(uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms @ 25 ℃ @ 100KHz (A)
0. 047	44	13.5	21.5	1	22	20	2000	94	8.5
0.068	44	17	25	1	20	20	1800	122.4	10.5
0.1	44	20.5	28.5	1.2	18	20	1500	150	12.4
0.15	44	26	34	1.2	16	22	1350. llathredd eg	202.5	13.8
0.22	44	29	41.5	1.2	14.5	22	1200	264	14.5