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Cynhwyswyr Snubber Polypropylen a ddefnyddir mewn cymwysiadau foltedd uchel, cerrynt uchel a pwls uchel

Disgrifiad Byr:

Cynhwysydd Echelinol Snubber SMJ-TE

Mae Cynwysorau Snubber yn gynwysorau cyfredol uchel, amledd uchel gyda therfynellau echelinol.Mae Cynhwyswyr Ffilm Echelinol ar gael yn CRE.Rydym yn cynnig rhestr eiddo, prisiau, a thaflenni data ar gyfer Axial Film Capacitors.

1. ISO9001 ac UL ardystiedig;

2. Rhestr helaeth;

 


Manylion Cynnyrch

Tagiau Cynnyrch

Data technegol

Amrediad tymheredd gweithredu Tymheredd gweithredu uchaf., Uchaf, uchafswm: + 85 ℃ tymheredd categori uchaf: +85 ℃ tymheredd categori is: -40 ℃
ystod capacitance 0.1μF~5.6μF
Foltedd graddedig

630V.DC ~ 2000V.DC

Cap.tol

±5%(J); ±10%(K)

Gwrthsefyll foltedd

1.5Un DC/10S

Ffactor afradu

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz

Gwrthiant inswleiddio

C≤0.33μF RS≥15000 MΩ (ar 20 ℃ 100V.DC 60S)

C>0.33μF RS*C≥5000S (ar 20 ℃ 100V.DC 60S)

Gwrthsefyll cerrynt streic

Disgwyliad oes

100000h(Dad; Θ man poeth ≤85 ° C)

Safon gyfeirio

IEC 61071; IEC 61881; GB/T17702

Cais

1. IGBT Snubber, GTO snubber

2. Swyddogaeth sylfaenol snubber yw amsugno egni o'r adweithyddion yn y gylched pŵer.

3. Mae'n cael ei ddefnyddio'n eang mewn offer electronig pŵer pan fydd y foltedd brig, brig amddiffyn amsugno presennol.

Amlinelliad o luniad

图片1

Cynhwysydd Echelinol SMJ-TE
foltedd Un630V.DC;Urms400Vac;Ni 945V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036. llarieidd-dra eg 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224. llarieidd-dra eg 14.2
foltedd Un 1000V.DC;Urms 500Vac;Ni 1500V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350. llathredd eg 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440. llechwraidd a 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485. llarieidd-dra eg 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575. llarieidd-dra eg 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2
foltedd Un 1200V.DC;Urms 550Vac;Ni 1800V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425. llathredd eg 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350. llathredd eg 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760. llarieidd-dra eg 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485. llarieidd-dra eg 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2
foltedd Un 1700V.DC;Urms 600Vac;Ni 2550V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125. llarieidd-dra eg 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680. llarieidd-dra eg 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650. llathredd eg 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2
foltedd Un 2000V.DC;Urms 700Vac;Ni 3000V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275. llarieidd-dra eg 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8
foltedd Un 3000V.DC;Urms 750Vac;Ni 4500V
Cynhwysedd(uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @ 25 ℃ @ 100KHz (A)
0. 047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350. llathredd eg 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5

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